STL6N2VH5 Datasheet - STMicroelectronics

STL6N2VH5 N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. 6(D) D S 5(D) 4(S) AM11269v1 Table 1. Device summary Marking STD1.

STL6N2VH5 Features

* Order code VDSS STL6N2VH5 20 V

* RDS(on) max. ID PTOT 1 2 3 0.03 Ω (VGS=4.5 V) 6 A 2.4 W 0.04 Ω (VGS=2.5 V) 1 2 3 6 5 4 Very low switching gate charge Very low thermal resistance Conduction losses reduced Switching losses reduced 2.5 V gate drive Very low thre

STL6N2VH5_STMicroelectronics.pdf