STL6N3LLH6 Datasheet - STMicroelectronics

STL6N3LLH6 N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. D S 6(D) 5(D) 4(S) AM11269v1 Table 1. Device summary Marking STG1 Package PowerFLAT.

STL6N3LLH6 Features

* Order code VDSS RDS(on) max. ID PTOT 1 2 3 STL6N3LLH6 30 V

* 0.025 Ω (VGS=10 V) 6 A 2.4W 0.04 Ω (VGS=4.5 V) 1 2 3 6 5 4 RDS(on)

* Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate

STL6N3LLH6_STMicroelectronics.pdf