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STL6N3LLH6 N-channel Power MOSFET

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Description

STL6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package Datasheet * preliminary data Fea.
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

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Features

* Order code VDSS RDS(on) max. ID PTOT 1 2 3 STL6N3LLH6 30 V
* 0.025 Ω (VGS=10 V) 6 A 2.4W 0.04 Ω (VGS=4.5 V) 1 2 3 6 5 4 RDS(on)
* Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate

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STL6N3LLH6 N-channel Power MOSFET STMicroelectronics
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