STL6NM60N Datasheet - STMicroelectronics

N-channel Power MOSFET

STL6NM60N Features

* Type STL6NM60N VDSS @ TJMAX 650 V RDS(on) Max < 0.92 Ω ID 5.75 A(1) 1. The value is rated according Rthj-case

* 100% avalanche tested www.DataSheet4U.com

* Low input capacitance and gate charge Low gate input resistance PowerFLAT (5x5) Application

* Switching applications Figur

STL6NM60N General Description

This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high effi.

STL6NM60N Datasheet (310.04 KB)