STP27N3LH5 Datasheet - STMicroelectronics

STP27N3LH5 N-channel Power MOSFET

This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). IPAK 3 2 1 3 1 DPAK TO-220 3 2 1 Figure 1. Internal schematic diagram D (TAB or 2.

STP27N3LH5 Features

* Type VDSS RDS(on) max STD27N3LH5 30 V 0.019 Ω STP27N3LH5 30 V 0.020 Ω STU27N3LH5 30 V 0.020 Ω

* RDS(on)

* Qg industry benchmark

* Extremely low on-resistance RDS(on)

* Very low switching gate charge

* High avalanche ruggedness

* Low gate drive power losses ID 27

STP27N3LH5-STMicroelectronics.pdf