STP27N60M2-EP Datasheet - STMicroelectronics

STP27N60M2-EP N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and an improved vertical structure, these devices exhibit low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering th.

STP27N60M2-EP Features

* Order code V DS RDS(on) max ID STP27N60M2-EP 600 V 0.163 Ω 20 A STW27N60M2-EP 600 V 0.163 Ω 20 A 3 2 1 TO-220 3 2 1 TO-247

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* Very low turn-off switching losses

* 100% avalanche tested

* Zener-pr

STP27N60M2-EP-STMicroelectronics.pdf