STP7NM80

N-channel Power MOSFET

STMicroelectronics

STP7NM80 Features

* TAB Order code VDS RDS(on) max. ID ct(s) TO-220 1 23 STP7NM80 800 V 1.05 Ω

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance 6.5 A Produ D(2, TAB) Applications

* Switching applications solete G(1) t(s) - Ob S(3)

STP7NM80 General Description

AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche charac.

STP7NM80 Datasheet (480.16 KB)