STP7NM60N Datasheet - STMicroelectronics

N-channel Power MOSFET

STP7NM60N Features

* TAB Order code VDS RDS(on) max. ID Package uct(s) TO-220 1 23 STP7NM60N 600 V 0.9 Ω

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance 5A TO-220 Prod D(2, TAB) Applications

* Switching applications solete G(1)

STP7NM60N General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most .

STP7NM60N Datasheet (314.24 KB)