STP90N55F4

N-channel Power MOSFET

STMicroelectronics

STP90N55F4 Features

* Type STP90N55F4 VDSS 55 V RDS(on) max < 0.008 Ω ID 90 A

* Exceptional dv/dt capability

* Extremely low on-resistance RDS(on)

* 100% avalanche tested Applications

* Switching applications Description This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGA

STP90N55F4 General Description

This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology. The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram $4!" ' .

STP90N55F4 Datasheet (227.26 KB)