STP9N60M2 Datasheet (STMicroelectronics)

STP9N60M2, N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converter

STP9N60M2 Features

* Order codes VDS @ TJmax RDS(on) max. ID STD9N60M2 STP9N60M2 650 V 0.78 Ω 5.5 A STU9N60M2

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* 100% avalanche tested

* Zener-protected PTOT 60 W Package DPAK TO-220 IPAK Applications