STP9NM60 Datasheet (STMicroelectronics)

STP9NM60, N-channel Power MOSFET

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.

The adoption of the Company’s

STP9NM60 STD9NM60 - STD9NM60-1 N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK Zener-Protected MDmesh™Power MOSFET TARGET DATA TYPE VDSS RDS(on) ID Pw STP9NM60 STD9NM60 STD9NM60-1 600 V 600 V 600 V < 0.60 Ω < 0.60 Ω < 0.60 Ω 8.3 A 8.3 A 8.3 A 100 W 100 W 100 W s TYPICAL RDS(on) = 0.55 Ω s HIGH dv/dt AND AVALANCHE CAPABILITIES s IMPROVED ESD CAPABILITY s LOW INPUT CAPACITANCE AND GATE CHARGE s LOW GATE INPUT RESISTANCE s TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS TO-220 IPAK

STP9NM60 Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta