STP9NM60N - N-channel Power MOSFET

STMicroelectronics

Datasheet Details

This series of devices is realized with the second generation of MDmesh™ technology.

Order codes STD9NM60N STF9NM60N STP9NM60N VDSS (@Tjmax) RDS(on) max. 650 V < 0.745 Ω ID 6.5 A.
100% avalanche tested.
Low input capacitance and gate charge.
Low gate input resistance Application Switching.

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