STP9NM60N

N-channel Power MOSFET

STMicroelectronics

STP9NM60N Features

* Order codes STD9NM60N STF9NM60N STP9NM60N VDSS (@Tjmax) RDS(on) max. 650 V < 0.745 Ω ID 6.5 A

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Application Switching applications Description This series of devices is realized with the sec

STP9NM60N General Description

This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding hig.

STP9NM60N Datasheet (551.96 KB)