STT7P2UH7 Datasheet - STMicroelectronics

STT7P2UH7 P-CHANNEL POWER MOSFET

This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations. Table 1: Device summary Order code Marking Package Packaging STT7P2UH7 7L.

STT7P2UH7 Features

* Order code STT7P2UH7 VDS 20 V RDS(on) max 0.0225 Ω @ 4.5 V ID 7A For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. October 2014 DocID025142 Rev 3 This is information on a product in full production. 1/13 www.st.com Contents Contents STT7P

STT7P2UH7 Datasheet (369.14 KB)