* Order code STT3P2UH7 VDS 20 V RDS(on) max 0.1 Ω @ 4.5 ID 3A
* Very low on-resistance
* Very low capacitance and gate charge
* High avalanche ruggedness Applications
* Switching applications Description This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench
STT3P2UH7 Datasheet (446.51 KB)
STT3P2UH7
446.51 KB
P-channel power mosfet.
STT3P2UH7
P-channel 20 V, 0.087 Ω typ., 3 A STripFET™ H7 Power MOSFET in a SOT23-6L package
Datasheet - production data
SOT23-6L
Figure 1: Internal .
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