* Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount Package. G S STT SERIES SOT - 223 D G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TA=25°C TA=70°C
STT3416
SamHop Microelectronics
124.71 KB
N-channel logic level enhancement mode field effect transistor.
STT3416Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS 3.
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