* Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D D G G D S S STT SERIES SOT-223 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Conti
STT3414
SamHop Microelectronics
114.78 KB
N-channel mosfet.
Gre r Pro
STT3414
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID .
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