STU5N95K5 Datasheet (STMicroelectronics)

STU5N95K5, N-channel Power MOSFET

- O S(3) This very high voltage N-channel Power MOSFET is designed using MDmesh t(s) AM01476v1_tab K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications crequiring superior power densit

STU5N95K5 Features

* TAB Order code VDS RDS(on) max. ID 3 ) 2 t(s 1 c IPAK te Produ D(2, TAB) STU5N95K5 950 V

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested

* Zener-protected Applications 2