STU8NC90ZI, STU8NC90Z Datasheet - STMicroelectronics

STU8NC90ZI N-channel Power MOSFET

The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large vari.

STU8NC90ZI Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

STU8NC90Z_STMicroelectronics.pdf