STU8NC90ZI, STU8NC90Z Datasheet - STMicroelectronics

STU8NC90ZI, STU8NC90Z, N-channel Power MOSFET

N-CHANNEL 900V - 1.1Ω - 7.6A Max220/I-Max220 Zener-Protected PowerMESH™III MOSFET TYPE STU8NC90Z STU9NC90ZI s s s s s s STU8NC90Z STU8NC90ZI VDSS 90.
The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-.

Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

Applications

* APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt(q) VISO Tstg Tj Parameter STU8NC90Z Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source

STU8NC90Z_STMicroelectronics.pdf