STW20N90K5 Datasheet - STMicroelectronics

STW20N90K5 N-channel Power MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 S(3) AM01475V1 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficie.

STW20N90K5 Features

* Order code VDS STW20N90K5 900 V

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested

* Zener-protected Applications

* Switching applications RDS(on ) max. 0.25 Ω ID 20 A Des

STW20N90K5-STMicroelectronics.pdf