* Type STW55NM60ND VDSS (@TJmax) 650 V RDS(on) max < 0.060 Ω ID 51 A
* The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance
* High dv/dt and avalanche capabiliti
STW55NM60ND Datasheet (197.95 KB)
STW55NM60ND
197.95 KB
N-channel mosfet.
STW55NM60ND
N-channel 600 V, 0.047 Ω typ., 51 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package
Datasheet
* production data
Fea.
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