STW56N65DM2 Datasheet - STMicroelectronics

N-CHANNEL MOSFET

STW56N65DM2 Features

* Order code VDS STW56N65DM2 650 V RDS(on) max. 0.065 Ω ID PTOT 48 A 360 W

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

* Zener-protected Applications

* Switc

STW56N65DM2 General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

STW56N65DM2 Datasheet (586.35 KB)

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STW56N65DM2

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STMicroelectronics ↗

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586.35 KB

Description:

N-channel mosfet.
STW56N65DM2 N-channel 650 V, 0.058 Ω typ., 48 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Inte.

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STW56N65DM2 Features

STW56N65DM2 General Description

Datasheet Details

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