Datasheet Details
- Part number
- VNS1NV04DP-E
- Manufacturer
- STMicroelectronics ↗
- File Size
- 369.14 KB
- Datasheet
- VNS1NV04DP-E-STMicroelectronics.pdf
- Description
- fully autoprotected Power MOSFET
VNS1NV04DP-E Description
VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET .
The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package.
VNS1NV04DP-E Features
* Max On-state resistance(1) Current limitation (typ)(1) Drain-Source clamp voltage(1)
1. Per each device. RDS(ON) ILIMH
VCLAMP
250m 1.7A 40V
* Linear current limitation
* Thermal shutdown
* Short circuit protection
* Integrated clamp
* Low current drawn fr
VNS1NV04DP-E Applications
* Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. Table 1. Device summary Package SO-8
September 2013
Tube VNS1NV04DP-E
Order codes Tape and reel
VNS1NV04D
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