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VNS1NV04DP-E - fully autoprotected Power MOSFET

VNS1NV04DP-E Description

VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET .
The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package.

VNS1NV04DP-E Features

* Max On-state resistance(1) Current limitation (typ)(1) Drain-Source clamp voltage(1) 1. Per each device. RDS(ON) ILIMH VCLAMP 250m 1.7A 40V
* Linear current limitation
* Thermal shutdown
* Short circuit protection
* Integrated clamp
* Low current drawn fr

VNS1NV04DP-E Applications

* Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. Table 1. Device summary Package SO-8 September 2013 Tube VNS1NV04DP-E Order codes Tape and reel VNS1NV04D

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fully autoprotected Power MOSFET STMicroelectronics
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