VNS1NV04DP-E Datasheet - STMicroelectronics

VNS1NV04DP-E fully autoprotected Power MOSFET

The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in thermal shutdow.

VNS1NV04DP-E Features

* Max On-state resistance(1) Current limitation (typ)(1) Drain-Source clamp voltage(1) 1. Per each device. RDS(ON) ILIMH VCLAMP 250m 1.7A 40V

* Linear current limitation

* Thermal shutdown

* Short circuit protection

* Integrated clamp

* Low current drawn fr

VNS1NV04DP-E-STMicroelectronics.pdf