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VNS1NV04P-E fully autoprotected Power MOSFET

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Description

VNN1NV04P-E, VNS1NV04P-E OMNIFET II fully autoprotected Power MOSFET .
The VNN1NV04P-E, VNS1NV04P-E are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power.

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Features

* Parameter Symbol Value Max on-state resistance (per ch. ) Current limitation (typ) Drain-source clamp voltage RON ILIMH VCLAMP 250 m 1.7 A 40 V
* Linear current limitation
* Thermal shutdown
* Short circuit protection
* Integrated clamp
* Low current dra

Applications

* Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. September 2013 Table 1. Device summary Package Order codes Tube Tape and reel SOT-223 VNN1NV04P-E VNN1

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fully autoprotected Power MOSFET STMicroelectronics
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