SPC6602 Datasheet - SYNC POWER

SPC6602 N & P Pair MOSFET

The SPC6602 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particular.

SPC6602 Features

* N-Channel 30V/2.8A,RDS(ON)=60mΩ@VGS=10V 30V/2.3A,RDS(ON)=80mΩ@VGS=4.5V

* P-Channel -30V/-2.8A,RDS(ON)=105mΩ@VGS=-10V -30V/-2.5A,RDS(ON)=135mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TS

SPC6602 Datasheet (555.73 KB)

SPC6602 Datasheet Preview — Preview of SPC6602 PDF

Datasheet Details

Part number:

SPC6602

Manufacturer:

SYNC POWER

File Size:

555.73 KB

Description:

N & p pair mosfet.

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SPC6602 Pair MOSFET SYNC POWER

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