SPC6605 Datasheet (SYNC POWER)

SPC6605, N & P Pair MOSFET

The SPC6605 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly

SPC6605 Features

* N-Channel 20V/3.6A,RDS(ON)=97mΩ@VGS=4.5V 20V/3.1A,RDS(ON)=113mΩ@VGS=2.5V

* P-Channel -20V/-2.4A,RDS(ON)= 128mΩ@VGS=-4.5V -20V/-2.0A,RDS(ON)=188mΩ@VGS=-2.5V

* Super high density cell design for extremely low RDS (ON)

* TSOT-23-6L package design PIN CONFIGURATION(TSOT-23

* 6L)