SPC6604 Datasheet (SYNC POWER)

SPC6604, N & P Pair MOSFET

The SPC6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particular

SPC6604 Features

* N-Channel 20V/4.0A,RDS(ON)=50mΩ@VGS=4.5V 20V/3.4A,RDS(ON)=60mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=75mΩ@VGS=1.8V

* P-Channel -20V/-3.4A,RDS(ON)=85mΩ@VGS=-4.5V -20V/-2.4A,RDS(ON)=110mΩ@VGS=-2.5V -20V/-1.7A,RDS(ON)=130mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS (ON)

* E