SPC6604 Datasheet - SYNC POWER

SPC6604 N & P Pair MOSFET

The SPC6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particular.

SPC6604 Features

* N-Channel 20V/4.0A,RDS(ON)=50mΩ@VGS=4.5V 20V/3.4A,RDS(ON)=60mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=75mΩ@VGS=1.8V

* P-Channel -20V/-3.4A,RDS(ON)=85mΩ@VGS=-4.5V -20V/-2.4A,RDS(ON)=110mΩ@VGS=-2.5V -20V/-1.7A,RDS(ON)=130mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS (ON)

* E

SPC6604 Datasheet (564.49 KB)

SPC6604 Datasheet Preview — Preview of SPC6604 PDF

Datasheet Details

Part number:

SPC6604

Manufacturer:

SYNC POWER

File Size:

564.49 KB

Description:

N & p pair mosfet.

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SPC6604 Pair MOSFET SYNC POWER

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