SPC6601 - N & P Pair MOSFET

Name: SPC6601
SKU: SPC6601-804949

SYNC POWER

Datasheet Details

The SPC6601 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

N-Channel 30V/2.8A,RDS(ON)=68mΩ@VGS=10V 30V/2.3A,RDS(ON)=78mΩ@VGS=4.5V 30V/1.5A,RDS(ON)=108mΩ@VGS=2.5V.
P-Channel -30V/-2.8A,RDS(ON)=105mΩ@VGS=-10V -30V/-2.5A,RDS(ON)=120mΩ@VGS=-4.5V -30V/-1.5A,RDS(ON)=148mΩ@VGS=-2.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
TSOT.
23-6L package design PIN.

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Published: May 20, 2014 |