SPC6601 Datasheet - SYNC POWER

SPC6601 N & P Pair MOSFET

The SPC6601 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particular.

SPC6601 Features

* N-Channel 30V/2.8A,RDS(ON)=68mΩ@VGS=10V 30V/2.3A,RDS(ON)=78mΩ@VGS=4.5V 30V/1.5A,RDS(ON)=108mΩ@VGS=2.5V

* P-Channel -30V/-2.8A,RDS(ON)=105mΩ@VGS=-10V -30V/-2.5A,RDS(ON)=120mΩ@VGS=-4.5V -30V/-1.5A,RDS(ON)=148mΩ@VGS=-2.5V

* Super high density cell design for extremely low RDS(ON)

* Ex

SPC6601 Datasheet (472.81 KB)

SPC6601 Datasheet Preview — Preview of SPC6601 PDF

Datasheet Details

Part number:

SPC6601

Manufacturer:

SYNC POWER

File Size:

472.81 KB

Description:

N & p pair mosfet.

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SPC6601 Pair MOSFET SYNC POWER

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