SPN120T20 Datasheet (SYNC POWER)

SPN120T20 - N-Channel MOSFET

The SPN120T20 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suitable for synchronous rectifier ap

SPN120T20 Features

* 200V/132A, RDS(ON)=11mΩ@VGS=10V

* High density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L/TO-220F-3L/TO-263-2L package design PIN CONFIGURATION TO-220-3L TO-220F-3L TO-263-2L PART MARKING 2021/11/23 Ver 3 Pa