SPN125T06 Datasheet (SYNC POWER)

SPN125T06 - N-Channel MOSFET

The SPN125T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suitable for synchronous rectif

SPN125T06 Features

* 60V/125A , RDS(ON)=4.3mΩ@VGS=10V 60V/125A , RDS(ON)=5.6mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L/TO-220F-3L/TO-251S-3L/TO-252-2L /PPAK5x6-8L/TO-263-2L package design 2020/04/28