SPN125T10 Datasheet - SYNC POWER

SPN125T10 N-Channel MOSFET

The SPN125T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier ap.

SPN125T10 Features

* 100V/112A, RDS(ON)=4.2mΩ@VGS=10V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L/TO-220F-3L/PPAK5x6-8L/TO-262-3L/ TO-263-2L package design PIN CONFIGURATION TO-220 TO-220F PPAK5x6 TO-262 TO-263

SPN125T10 Datasheet (476.76 KB)

SPN125T10 Datasheet Preview — Preview of SPN125T10 PDF

Datasheet Details

Part number:

SPN125T10

Manufacturer:

SYNC POWER

File Size:

476.76 KB

Description:

N-channel mosfet.

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SPN125T10 N-Channel MOSFET SYNC POWER

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