SPN125T10 Datasheet (SYNC POWER)

SPN125T10, N-Channel MOSFET

The SPN125T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suitable for synchronous rectifier ap

SPN125T10 Features

* 100V/112A, RDS(ON)=4.2mΩ@VGS=10V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L/TO-220F-3L/PPAK5x6-8L/TO-262-3L/ TO-263-2L package design PIN CONFIGURATION TO-220 TO-220F PPAK5x6 TO-262 TO-263