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SPN120T06

N-Channel MOSFET

SPN120T06 Features

* 60V/108A,RDS(ON)=4.9mΩ@VGS=10V

* 60V/108A,RDS(ON)=7.5mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L/TO-220F-3L/TO-252-2L package design PIN CONFIGURATION TO-220 TO-220F TO-252

SPN120T06 General Description

The SPN120T06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteb.

SPN120T06 Datasheet (459.37 KB)

Preview of SPN120T06 PDF

Datasheet Details

Part number:

SPN120T06

Manufacturer:

SYNC POWER

File Size:

459.37 KB

Description:

N-channel mosfet.

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SPN120T06 N-Channel MOSFET SYNC POWER

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