SPN120T06 Datasheet (SYNC POWER)

SPN120T06 - N-Channel MOSFET

The SPN120T06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application, noteb

SPN120T06 Features

* 60V/108A,RDS(ON)=4.9mΩ@VGS=10V

* 60V/108A,RDS(ON)=7.5mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L/TO-220F-3L/TO-252-2L package design PIN CONFIGURATION TO-220 TO-220F TO-252