SPN125N04A - N-Channel Enhancement Mode MOSFET
The SPN125N04A is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suitable for synchronous recti
SPN125N04A Features
* 40V/125A, RDS(ON)=3.3mΩ@VGS=10V
* 40V/125A, RDS(ON)=4.5mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* TO-220-3L/TO-220F-3L/TO-252-2L package design PIN CONFIGURATION TO-220 TO-220F TO-252
