SPN8852 Datasheet (SYNC POWER)

SPN8852, N-Channel MOSFET

The SPN8852 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application , note

SPN8852 Features

* 150V/4.1A,RDS(ON)=88mΩ@VGS=10V

* 150V/2A,RDS(ON)=100mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* PPAK5x6-8L package design PIN CONFIGURATION(PPAK5x6

* 8L) PART MARKING 2020/03/10