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SPN8852

N-Channel MOSFET

SPN8852 Features

* 150V/4.1A,RDS(ON)=88mΩ@VGS=10V

* 150V/2A,RDS(ON)=100mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* PPAK5x6-8L package design PIN CONFIGURATION(PPAK5x6

* 8L) PART MARKING 2020/03/10

SPN8852 General Description

The SPN8852 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , note.

SPN8852 Datasheet (627.81 KB)

Preview of SPN8852 PDF

Datasheet Details

Part number:

SPN8852

Manufacturer:

SYNC POWER

File Size:

627.81 KB

Description:

N-channel mosfet.

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TAGS

SPN8852 N-Channel MOSFET SYNC POWER

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