SPP2337 - P-Channel Enhancement Mode MOSFET
The SPP2337 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as
SPP2337 Features
* -100V/-1.5A,RDS(ON)= 300mΩ@VGS=-10V
* -100V/-1.2A,RDS(ON)= 360mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23 package design PIN CONFIGURATION(SOT-23) PART MARKING 2024/03/21 Ver.
