SPN166N06 Datasheet (SYNC POWER)

SPN166N06, N-Channel MOSFET

The SPN166N06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suitable for synchronous rectifier ap

SPN166N06 Features

* 60V/166A,RDS(ON)=3.1mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L/TO-252-2L/PPAK5x6-8L/ TOLL-8 package design PIN CONFIGURATION TO-220 TO-220F TO252 PPAK5x6 TOLL8 PART MARKING 2024/