SPN340N06 Datasheet (SYNC POWER) - N-Channel Enhancement Mode MOSFET

SPN340N06, N-Channel Enhancement Mode MOSFET

The SPN340N06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suitable for synchronous rectifier ap

SPN340N06 Features

* 60V/340A, RDS(ON)=2.1mΩ@VGS=10V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* Enhanced Avalanche Ruggedness

* TO-220-3L/PPAK5x6 package design APPLICATIONS

* DC/DC Converter

* Hard Switching