STA6610 Datasheet (SamHop Microelectronics) - Dual N-Channel Enhancement Mode Field Effect Transistor

STA6610, Dual N-Channel Enhancement Mode Field Effect Transistor

S T A6610 S amHop Microelectronics C orp.

Nov.24 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S S uper high dense cell design for low R DS (ON ).

ID 7.6A R DS (ON) ( m Ω ) Max 23 @ V G S = 10V 35 @ V G S = 4.5V R ugged and reliable.

S urface Mount P ackage.

E S D P rotected.

D1 8 D1 7 D2 6 D2 5 P DIP -8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage G