* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID 8.9A R DS(ON) (m Ω) Max 21 @ VGS=10V 30 @ VGS=4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD T
STM4820
SamHop Microelectronics
202.68 KB
N-channel enhancement mode field effect transistor.
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STM4820
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMM.
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