STM6375 - P-Channel Enhancement Mode MOSFET
S T M6375 S amHop Microelectronics C orp.
S ep.21,2004 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) Max ID -8A R DS (ON) S uper high dense cell design for low R DS (ON ).
20 @ V G S = -4.5V 28 @ V G S = -2.5V R ugged and reliable.
S urface Mount P ackage.
D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinu
