STS8201 Datasheet (SamHop Microelectronics) - Dual N-Channel E nhancement Mode Field Effect Transistor

STS8201, Dual N-Channel E nhancement Mode Field Effect Transistor

www.DataSheet4U.com S T S 8201 S amHop Microelectronics C orp.

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03 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 5A R DS (ON) S uper high dense cell design for low R DS (ON ).

27 @ V G S = 4.0V 40 @ V G S = 2.5V R ugged and reliable.

S urface Mount P ackage.

E S D P rotected.

D1 D2 S OT26 Top View S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwis