* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D G G S STT SERIES SO T - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain C
STT100
SamHop Microelectronics
129.81 KB
N-channel mosfet.
Green Product
STT100
Ver 3.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
100V
ID
1.2.
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