STT13005 Datasheet - ST Microelectronics

STT13005 High voltage fast-switching NPN power transistor

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in l.

STT13005 Features

* NPN bipolar transistor Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 2 1 Applications

* 3 SOT-32 Electronic ballast for fluorescent lighting Flyback and forward single

STT13005_STMicroelectronics.pdf