STT13005 - High voltage fast-switching NPN power transistor
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in l
STT13005 Features
* NPN bipolar transistor Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 2 1 Applications
* 3 SOT-32 Electronic ballast for fluorescent lighting Flyback and forward single
