STT13005D - High voltage fast-switching NPN power transistor
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in l
STT13005D Features
* Integrated antiparallel collector-emitter diode High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications
* Electronic ballast for fluorescent lighting Flyback and forward single transistor low power converter
