STT13005D Datasheet - ST Microelectronics

STT13005D High voltage fast-switching NPN power transistor

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in l.

STT13005D Features

* Integrated antiparallel collector-emitter diode High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications

* Electronic ballast for fluorescent lighting Flyback and forward single transistor low power converter

STT13005D_STMicroelectronics.pdf