* Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F package. D G G D S STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Volt
STP652F
SamHop
115.98 KB
N-channel logic level enhancement mode field effect transistor.
Gre r Pro STP652F Ver 1.1 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V.
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