SSH20N50 Datasheet, Mosfets, Samsung Electronics

PDF File Details

Part number:

SSH20N50

Manufacturer:

Samsung Electronics

File Size:

275.27kb

Download:

📄 Datasheet

Description:

(ssh20n45) n-channel power mosfets.

TAGS

SSH20N50

Samsung Electronics

📁 Related Datasheet

SSH20N50 - N-Channel Power MOSFETs (Taitron Components)
N-Channel Power MOSFET’s Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS (V) IRFP150 SSH60N10 IRFP250 S.

SSH210 - Surface Mount Schottky Barrier Rectifier (Taiwan Semiconductor)
SSH210 Taiwan Semiconductor CREAT BY ART Surface Mount Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Ideal for automated pla.

SSH22N50A - Advanced Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 SSH22N50A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Char.

SSH25N35 - (SSH25N35 / SSH25N40) N-Channel Power MOSFET (Samsung Electronics)
.. DataShee . . DataSheet 4 U . .. et4U. DataShee . DataShe.

SSH25N40 - (SSH25N35 / SSH25N40) N-Channel Power MOSFET (Samsung Electronics)
.. DataShee . . DataSheet 4 U . .. et4U. DataShee . DataShe.

SSH25N40A - Advanced Power MOSFET (Fairchild Semiconductor)
.. Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha.

SSH10N60A - advanced power MOSFET (Fairchild)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.

SSH10N60B - 600V N-Channel MOSFET (Fairchild)
SSH10N60B November 2001 SSH10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod.

SSH10N70 - N-Channel Power MOSFET (Samsung)
.. .. .. .

SSH10N80 - (SSH10N70 / SSH10N80) N-Channel Power MOSFETs (Samsung)
.. .. .. .