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SSH10N60A advanced power MOSFET

SSH10N60A Description

Advanced Power MOSFET .

SSH10N60A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ. ) SSH10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 10 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source

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Datasheet Details

Part number
SSH10N60A
Manufacturer
Fairchild
File Size
243.68 KB
Datasheet
SSH10N60A_Fairchild.pdf
Description
advanced power MOSFET

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advanced power MOSFET Fairchild
Fairchild SSH10N60A-like datasheet