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SSH10N60A - advanced power MOSFET

Fairchild

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Datasheet Details

Part number	SSH10N60A
Manufacturer	Fairchild
File Size	243.68 KB
Description	advanced power MOSFET
Datasheet	SSH10N60A_Fairchild.pdf

SSH10N60A Product details

Features

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ. ) SSH10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 10 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 oC ) Dra.

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Published: May 5, 2005 |