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SSH10N60A

advanced power MOSFET

SSH10N60A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSH10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 10 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source

SSH10N60A Datasheet (243.68 KB)

Preview of SSH10N60A PDF

Datasheet Details

Part number:

SSH10N60A

Manufacturer:

Fairchild

File Size:

243.68 KB

Description:

Advanced power mosfet.

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SSH10N60A advanced power MOSFET Fairchild

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