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SSH10N80A Advanced Power MOSFET

SSH10N80A Description

Advanced Power MOSFET .

SSH10N80A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Chara

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Datasheet Details

Part number
SSH10N80A
Manufacturer
Samsung
File Size
209.61 KB
Datasheet
SSH10N80A-Samsung.pdf
Description
Advanced Power MOSFET

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Advanced Power MOSFET Samsung
Samsung SSH10N80A-like datasheet