Datasheet Specifications
- Part number
- SSH10N80A
- Manufacturer
- Samsung
- File Size
- 209.61 KB
- Datasheet
- SSH10N80A-Samsung.pdf
- Description
- Advanced Power MOSFET
Description
Advanced Power MOSFET .
Features
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL CharaSSH10N80A Distributors
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