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SSH10N80A Datasheet - Samsung

SSH10N80A Advanced Power MOSFET

SSH10N80A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Chara

SSH10N80A-Samsung.pdf

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Datasheet Details

Part number:

SSH10N80A

Manufacturer:

Samsung

File Size:

209.61 KB

Description:

Advanced power mosfet.

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SSH10N80A SSH10N80A Advanced Power MOSFET Samsung

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