SSH10N80A Datasheet, Mosfet, Samsung

SSH10N80A Features

• Mosfet Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low

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Part number:

SSH10N80A

Manufacturer:

Samsung

File Size:

209.61kb

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📄 Datasheet

Description:

Advanced power mosfet.

TAGS

SSH10N80A

Samsung

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