SSH10N80A - Advanced Power MOSFET

Samsung

Datasheet Details

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 ΟC ) Continuous Drain Current (TC=100 ΟC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current.

📁 SSH10N80A Similar Datasheet

SSH10N60A - advanced power MOSFET (Fairchild)
SSH10N60B - 600V N-Channel MOSFET (Fairchild)
SSH10N90A - Advanced Power MOSFET (Samsung Electronics)
SSH20N50 - (SSH20N45) N-Channel Power MOSFETs (Samsung Electronics)
SSH210 - Surface Mount Schottky Barrier Rectifier (Taiwan Semiconductor)
SSH22N50A - Advanced Power MOSFET (Fairchild Semiconductor)
SSH25N35 - (SSH25N35 / SSH25N40) N-Channel Power MOSFET (Samsung Electronics)
SSH25N40 - (SSH25N35 / SSH25N40) N-Channel Power MOSFET (Samsung Electronics)

Other Datasheets by Samsung

Published: Dec 31, 2016 |