SSH7N90
Samsung
420.47kb
N-channel power mosfets.
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BVDSS = 900V • • • • • • • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance.
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SSH10N70 - N-Channel Power MOSFET
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SSH10N80 - (SSH10N70 / SSH10N80) N-Channel Power MOSFETs
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Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
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