SSH7N90A Datasheet, Mosfets, Fairchild

SSH7N90A Features

• Mosfets BVDSS = 900V
• Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge

PDF File Details

Part number:

SSH7N90A

Manufacturer:

Fairchild

File Size:

246.12kb

Download:

📄 Datasheet

Description:

N-channel power mosfets.

TAGS

SSH7N90A

Fairchild

📁 Related Datasheet

SSH7N90 - N-Channel Power Mosfets (Samsung)
.

SSH7N60B - 600V N-Channel MOSFET (Fairchild Semiconductor)
SSH7N60B November 2001 SSH7N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produ.

SSH7N80A - Advanced Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET SSH7N80A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extend.

SSH70N10A - Advanced Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET SSH70N10A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Exten.

SSH10N60A - advanced power MOSFET (Fairchild)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.

SSH10N60B - 600V N-Channel MOSFET (Fairchild)
SSH10N60B November 2001 SSH10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod.

SSH10N70 - N-Channel Power MOSFET (Samsung)
.. .. .. .

SSH10N80 - (SSH10N70 / SSH10N80) N-Channel Power MOSFETs (Samsung)
.. .. .. .

SSH10N80A - Advanced Power MOSFET (Samsung)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.

SSH10N80A - N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
N-CHANNEL POWER MOSFET FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Exten.