Part number:
SSH10N80
Manufacturer:
Samsung
File Size:
294.00 KB
Description:
(ssh10n70 / ssh10n80) n-channel power mosfets.
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
.
SSH10N80 Datasheet (294.00 KB)
SSH10N80 Datasheet (294.00 KB)
SSH10N80
Samsung
294.00 KB
(ssh10n70 / ssh10n80) n-channel power mosfets.
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
.
📁 Related Datasheet
SSH10N80A - Advanced Power MOSFET
(Samsung)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
SSH10N80A - N-CHANNEL POWER MOSFET
(Fairchild Semiconductor)
N-CHANNEL POWER MOSFET
FEATURES
• Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Exten.
SSH10N60A - advanced power MOSFET
(Fairchild)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
SSH10N60B - 600V N-Channel MOSFET
(Fairchild)
SSH10N60B
November 2001
SSH10N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are prod.
SSH10N70 - N-Channel Power MOSFET
(Samsung)
..
..
..
.
SSH10N90A - Advanced Power MOSFET
(Samsung Electronics)
..
..
..
.
SSH10N90A - N-CHANNEL POWER MOSFET
(Fairchild Semiconductor)
N-CHANNEL POWER MOSFET
SSH10N90A
FEATURES
BVDSS = 900V • • • • • • • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitanc.
SSH11N90 - N-Channel Power MOSFET
(Samsung)
Free Datasheet http://..net/
Free Datasheet http://..net/
Free Datasheet http://..net/
Free Datasheet htt.
