SSH11N90 Datasheet, Mosfet, Samsung

PDF File Details

Part number:

SSH11N90

Manufacturer:

Samsung

File Size:

187.25kb

Download:

📄 Datasheet

Description:

N-channel power mosfet.

TAGS

SSH11N90

Samsung

📁 Related Datasheet

SSH10N60A - advanced power MOSFET (Fairchild)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.

SSH10N60B - 600V N-Channel MOSFET (Fairchild)
SSH10N60B November 2001 SSH10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod.

SSH10N70 - N-Channel Power MOSFET (Samsung)
.. .. .. .

SSH10N80 - (SSH10N70 / SSH10N80) N-Channel Power MOSFETs (Samsung)
.. .. .. .

SSH10N80A - Advanced Power MOSFET (Samsung)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.

SSH10N80A - N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
N-CHANNEL POWER MOSFET FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Exten.

SSH10N90A - Advanced Power MOSFET (Samsung Electronics)
.. .. .. .

SSH10N90A - N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
N-CHANNEL POWER MOSFET SSH10N90A FEATURES BVDSS = 900V • • • • • • • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitanc.

SSH20N50 - (SSH20N45) N-Channel Power MOSFETs (Samsung Electronics)
.

SSH20N50 - N-Channel Power MOSFETs (Taitron Components)
N-Channel Power MOSFET’s Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS (V) IRFP150 SSH60N10 IRFP250 S.